 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary Preliminary Product Description Stanford Microdevices' SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V and 100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Gain vs. Frequency SHF-0186K DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET Product Features * Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25C VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Intercept Point Saturated Drain Current VDS = 3V, VGS = 0V Transconductance VDS = 3V, VGS = 0V Pinch-Off Voltage VDS = 3V, IDQ = 1mA Gate-to-Source Breakdown Voltage, Igs = 1.2mA Gate-to-Drain Breakdown Voltage, Igd = 1.2mA Thermal Resistance (junction to lead) Gmax S21 * +28 dBm P1dB Typical * +40 dBm Output IP3 Typical * High Drain Efficiency: Up to 46% at Class AB * 17 dB Gain at 900 MHz (Application circuit) * 15 dB Gain at 1900 MHz (Application circuit) Applications * Analog and Digital Wireless System * Cellular PCS, CDPD, Wireless Data, Pagers * AN-020 Contains detailed application circuits Units Min. Typ. 23.4 20.1 13.7 18.0 15.2 17.9 14.6 28.0 28.8 40.9 40.4 300 175 -2.7 -1.9 -20 -20 66 -1.0 -17 -17 Max. Symbol GMAX S 21 S 21 P 1dB OIP3 IDSS gm VP V bgs V bgd Rth f = 900 MHz, ZS=ZS*, ZL=ZL* f = 1960 MHz, ZS=ZS*, ZL=ZL* f = 900 MHz, ZS=ZL= 50 Ohms f = 1960 MHz, ZS=ZL= 50 Ohms f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT dB dB dB dB m dB m mA mS V V V C/W The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101577 Rev A 1 Preliminary SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDSVDS (max) < (TJ - TL)/RTH Parameter Drain-to-Source Voltage Gate-to-Source Voltage RF Input Power Operating Temperature Storage Temperature Range Operating Junction Temperature Symbol V DS VGS PIN TOP Tstor TJ Value +12 -5 to 0 200 -45 to +85 -65 to +175 +175 Unit V V mW C C C Typical Performance - Engineering Application Circuits (See AN-020) Freq (MHz ) 945 1960 2140 2450 VDS (V) 8 8 8 8 IDQ (mA) 100 100 100 100 P 1d B (dBm) 28.0 28.8 28.7 28.5 OIP3* (dBm) 41.0 39.5 39.0 39.5 Gain (dB) 17.9 14.6 14.5 14.0 S11 (dB) -19.4 -15.8 -12.3 -14.7 S 22 (dB) -9.62 -5.31 -7.02 -5.28 NF (dB) 3.1 2.5 3.0 2.9 ZSOPT ZLOPT Mag Ang Mag Ang .50 .50 .60 105 120 130 .16 .18 .08 * 15dBm per tone Data above represents typical performance of the application circuits noted in Application Note AN-020. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.stanfordmicro.com or call your local sales representative. D G S ZLOPT ZSOPT 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101577 Rev A 2 - .45 40 .02 50 168 170 130 Preliminary SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=8V, IDQ=100mA, 25 C) 40 30 Insertion Gain & Isolation 0 -10 25 20 Insertion Gain vs Temperature Isolation (dB) Gain (dB) 20 10 S21 S12 Gmax Gain (dB) 15 10 5 0 -5 -10 0 2 4 6 8 10 T = -40, 25, 85C -20 -30 -40 -50 0 -10 0 2 4 6 8 10 12 Frequency (GHz) S11 vs Frequency 1.0 0.5 Frequency (GHz) S22 vs Frequency 1.0 2.0 6 GHz 0.5 2.0 10 GHz 0.2 10 GHz 13 GHz 5.0 0.2 5.0 13 GHz 3 GHz 0.0 0.2 0.5 1.0 2.0 5.0 inf 6 GHz 0.0 0.2 0.5 1.0 2.0 5.0 inf 3 GHz 2 GHz 0.2 1 GHz 5.0 2 GHz 5.0 0.2 0.5 1 GHz 2.0 0.5 2.0 1.0 1.0 350 300 250 DC-IV Curves (VGS = -2 to 0V, 0.2V steps) VGS = 0V IDS (mA) 200 150 100 50 0 0 1 2 3 4 5 6 7 8 VGS = -2V VDS (Volts) Note: S-parameters are de-embedded to the device leads. The data represents typical performace of the device. Measured s-parameter data files can be downloaded using a link found on the SHF-0186K device page from our web site at www.stanfordmicro.com. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101577 Rev A 3 Preliminary SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number SHF-0186K Reel Siz e 7" Devices/Reel 1000 Pin # 1 2 3 4 Function Gate GND & Source Drain GND & Source Gate pin. Description Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Drain pin. Same as Pin 2 Part Symbolization The part will be symbolized with an "H1" designator on the top surface of the package. Package Dimensions H1 PCB Pad Layout H1 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101577 Rev A 4 |
Price & Availability of SHF-0186K
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |